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 A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Description
The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET's Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors' output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.
Features
* * * * * Turn-off propagation delay 15ns and turn-off time 20ns. Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous Mode (CCM) operation Compliant with Energy Star V2.0 and European Code of Conduct V3 Halogen Free part 5-15V Vcc range
Application
*
Flyback Converters in: * Adaptors * LCD Monitors * Server PSU's * Set Top Boxes LLC Converter in: * High Power Adaptors * LCD TV * Street Lighting
Mechanical Data
* * Case: SO-8 Marking Information: See Page 13
*
Refer to documents: AN54, AN69, DN90, DN91 and DN94 available from the website
Ordering Information
Product ZXGD3101N8TC Status Active Package SO-8 Marking ZXGD3101 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2500
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
1 of 14 www.diodes.com
June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Maximum Ratings
Parameter Supply voltage (Note 1) Continuous Drain pin voltage (Note 1) GATEH and GATEL output Voltage (Note 1) Driver peak source current Driver peak sink current Reference current Bias voltage Bias current Power dissipation at TA =25C Operating junction temperature Storage temperature Symbol VCC VD VG ISOURCE ISINK IREF VBIAS IBIAS PD TJ TSTG Limit 15 -3 to180 -3 to VCC + 3 4 7 25 VCC 100 490 -40 to +150 -50 to +150 Unit V V V A A mA V mA mW C C
Thermal Characteristics
Parameter Junction to ambient (Note 2) Junction to lead (Note 3) Symbol RJA RlA Value 255 120 Unit C/W C/W
ESD Rating
Model Human Body Machine
Notes: 1.All voltages are relative to GND pin 2. Mounted on minimum 1oz weight copper on FR4 PCB in still air conditions. 3. Output Drivers - Junction to solder point at end of the lead 5 and 6
Rating 4000 400
Unit V V
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Electrical Characteristics @TA = 25C, VCC= 10V,
Parameter Input and supply characteristics Symbol
RBIAS=1.8k, RREF=3k Conditions Min. Typ. Max. Unit
VDRAIN -200m V Operating current Gate Driver Turn-off Threshold Voltage(Note 4) IOP VDRAIN 0V
-
3 8
mA -
VT VG(off)
VG = 1V, (Note 5) VDRAIN 0V, (Note 5) VDRAIN = -60mV, (Note 6)
-45 5.0 7.0 8.4 9.2 9.3
-16 0.6 7.5 8.5 9 9.4 9.5 2.5 2.5 525
0 1 -
mV
GATE output voltage (Note 4) VDRAIN = -80mV, (Note 6) VG VDRAIN = -100mV, (Note 6) VDRAIN -140mV, (Note 6) VDRAIN -200mV, (Note 6) GATEH peak source current GATEL peak sink current Turn on Propagation delay Turn off Propagation delay Gate rise time Gate fall time
Notes:
V A A ns ns ns ns
ISOURCE ISINK td1 td2 tr tf
VGH = 1V VGL = 5V
CL = 2.2nF, (Notes 6 and 7)
15 305 20
4. GATEH connected to GATEL 5. RH = 100k, RL = O/C 6. RL = 100k, RH = O/C 7. Refer to Fig 6: test circuit and Fig 7: timing diagram on Page 12
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Schematic Symbol and Pin Out Details
Vcc
+ Differential - amplifier
Gate drive amplitude control
DRAIN
+ High volt - comparator
Turn-on/off control
GATEH Driver GATEL
Threshold voltage control
REF
BIAS GND
Pin No. 1 2 3 4 5 6 7 8
Notes:
Symbol NC REF GATEL GATEH VCC GND BIAS DRAIN
Description and function No connection This pin can be connected to GND Reference This pin is connected to VCC via resistor, RREF. RREF should be selected to source approximately 3mA into this pin. (Note 8) Gate turn off This pin sinks current, ISINK, from the synchronous MOSFET Gate. Gate turn on This pin sources current, ISOURCE, to the synchronous MOSFET Gate. Power Supply This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor. Ground This is the ground reference point. Connect to the synchronous MOSFET Source terminal. Bias This pin is connected to VCC via resistor, RBIAS. RBIAS should be selected to source 1.6 times IREF into this pin. (Note 9) Drain connection This pin connects directly to the synchronous MOSFET Drain terminal.
8. REF pin should be assumed to be at GND +0.7V. 9. BIAS pin should be assumed to be at GND +0.3V.
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Operation
Normal Operation
The operation of the device is described step-by-step with reference to the timing diagram below. 1. The detector monitors the MOSFET Drain-Source voltage. 2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.6V on the Drain pin. 3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage and current is sourced out of the GATEH pin. 4. The current out of the GATEH pin is sourced into the synchronous MOSFET Gate to turn the device on. 5. The GATEH output voltage is now proportional to the Drain-Source voltage drop across the MOSFET due to the current flowing through the MOSFET. 6. MOSFET conduction continues until the drain current reaches zero. 7. At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage is pulled low by the GATEL, turning the device off.
Body Diode Conduction Drain current zero
MOSFET Gate Current
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
1a) Continuous Conduction Mode (CCM)
1b) Critical Conduction Mode (CrCM)
1c) Discontinuous Conduction Mode (DCM)
Figure 1: Typical waveforms
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Typical Characteristics
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Typical Characteristics
10 8
See Fig.4 VG
10 8
VG
Voltage (V)
6 4 2 0 -2 -400 -200 0 200 400 600 800 1000
VD
Voltage (V)
6 4
VD
2 0 -2 -20 0 20 40
See Fig.4
60
Time (ns)
Time (ns)
Switch On Speed
1000 8.6
Switch Off Speed
Supply Current (mA)
8.5 8.4 8.3 8.2 8.1 8.0 -50 -25 0 25 50 75
F=100kHz VCC=10V RBIAS=1.8K RREF=3k CLOAD=2.2nF RLOAD=100k
ton
VCC=10V RBIAS=1.8k RREF=3k CLOAD=2.2nF
Time (ns)
100
toff
RLOAD=1k
10 -50
-25
0
25
50
75
100 125 150
100 125 150
Temperature (C)
Temperature (C)
Switching vs Temperature
35 30 Supply Current (mA) 25 20 15 10 5 0 0 2 4
F=100kHz, RBIAS=1.8k RREF=3k, RLOAD=100k Vcc=15V Vcc=12V Vcc=10V Vcc= 8V
Supply Current vs Temperature
20 18 VCC=10V 16 RBIAS=1.8k 14 RREF=3k 12 RLOAD=100k 10 8 6 4 2 0 1000
CLOAD=10nF CLOAD=4.7nF CLOAD=2.2nF CLOAD=1nF
6
8
10
Supply Current (mA)
10000
100000
Capacitance (nF)
Frequency (Hz) Supply Current vs Frequency
Supply Current vs Capacitive Load
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
10
10
VG Gate Voltage (V)
8 6
IREF= 2mA
VG Gate Voltage (V)
VCC = 10V IBIAS= 5mA RLOAD=1k
VCC= 10V
8 6
IBIAS= 6mA
IREF= 3mA RLOAD=1k
4 2
IREF=2.5mA IREF= 3mA IREF=3.5mA IREF= 4mA
4 2
IBIAS=5.5mA IBIAS= 5mA IBIAS=4.5mA IBIAS= 4mA
0 -0.10
-0.08
-0.06
-0.04
-0.02
0.00
0 -0.10
-0.08
-0.06
-0.04
-0.02
0.00
VD Drain Voltage (V)
VD Drain Voltage (V)
Transfer Characteristic
Transfer Characteristic
Component Selection
It is advisable to decouple the ZXGD3101 closely to VCC and ground due to the possibility of high peak gate currents with C1 in Figure 2.
The proper selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value for resistor RREF to give a reference current, IREF, of ~3mA. The value of RBIAS must then be 0.6 times the value of RREF giving a bias current, IBIAS, of ~1.6 times IREF. This provides a recommended typical offset voltage of ~20mV. External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption issues or dissipation within the part.
RREF = (VCC -0.7V) / 0.003 RBIAS = (VCC -0.3V) / 0.005
Layout considerations
The Gate pins should be as close to the MOSFET Gate as possible. Also the ground return loop should be as short as possible. The decoupling capacitor should be close to the VCC and Ground pin, and should be a X7R type.
For more detailed information refer to application note AN54..
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Figure 2 Example connection for low side synchronous rectification
Figure 3: Example connection for high side synchronous rectification
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Figure 4: Example connections for LLC converter
Figure 5: Example connections for Forward converter
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Figure 6: Test circuit
Figure 7: Timing Diagram
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Package Outline and Dimensions
E1 E A1 L
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm
Suggested Pad Layout
X
0.254
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
Marking Information
ZXGD3101 = Product Type Marking Code YM = Date Code Marking Y = Year (ex. W = 2009) M = Month (ex. 9 = September)
ZXGD 3101 YM
Date Code Key Year Code Month Code
2009 W Jan 1 Feb 2
2010 X Mar 3 Apr 4
2011 Y May 5 Jun 6
2012 Z Jul 7
2013 A Aug 8 Sep 9
2014 B Oct O Nov N
2015 C Dec D
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
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